STP3N150 datasheet(4/22 Pages) STMICROELECTRONICS

Part #	STP3N150

Description	N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages

PDF	22 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 22 page

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

2.5

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 2.5 A

1.6

trr

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

410

Qrr

Reverse recovery charge

2.4

µC

IRRM

Reverse recovery current

11.7

trr

Reverse recovery time

ISD = 2.5 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 19. Test circuit for inductive

load switching and diode recovery times)

540

Qrr

Reverse recovery charge

3.3

µC

IRRM

Reverse recovery current

12.3

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STFW3N150, STH3N150-2, STP3N150, STW3N150

Electrical characteristics

DS5052 - Rev 12

page 4/22

STP3N150 Datasheet(PDF) 4 Page - STMicroelectronics

STP3N150 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22

Datasheet Download

Link URL