STGP20M65DF2 datasheet(3/16 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 250 μA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 20 A

1.55

2.0

VGE = 15 V, IC = 20 A,

TJ = 125 °C

1.95

VGE = 15 V, IC = 20 A,

TJ = 175 °C

2.1

Forward on-voltage

IF = 20 A

1.85

IF = 20 A, TJ = 125 °C

1.65

IF = 20 A, TJ = 175 °C

1.55

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 500 µA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ± 20 V

250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

1688

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCC = 520 V, IC = 20 A,

VGE = 0 to 15 V

(see Figure 29. Gate charge test

circuit)

Qge

Gate-emitter charge

Qgc

Gate-collector charge

STGP20M65DF2

Electrical characteristics

DS11374 - Rev 3

page 3/16

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