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STGWA50IH65DF Datasheet(PDF) 6 Page - STMicroelectronics |
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STGWA50IH65DF Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Figure 7. Forward bias safe operating area IGBT051020171437FSOA 102 101 100 100 101 102 IC (A) VCE (V) tp =1 µs tp =100 µs tp =1 ms tp =10 µs T j ≤175 °C T c = 25°C single pulse V GE = 15 V Figure 8. Transfer characteristics IGBT091020171435TCH 125 100 75 50 25 0 5 7 9 IC (A) VGE (V) Tj = 175 °C Tj = 25 °C VCE = 6 V Figure 9. Diode VF vs forward current IGBT051020171438DVF 3.0 2.4 1.8 1.2 0.6 0.0 0 20 40 60 80 VF (V) IF (A) Tj = 175 °C Tj = -40 °C Tj = 25 °C Figure 10. Normalized VGE(th) vs junction temperature IGBT091020171216NVGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 0 50 100 150 VGE(th) (Norm.) TJ (°C) VCE = VGE , IC = 1 mA Figure 11. Normalized V(BR)CES vs junction temperature IGBT051020171518NVBR 1.06 1.02 0.98 0.94 0.9 -50 0 50 100 150 V(BR)CES (Norm.) TJ (°C) IC = 1 mA Figure 12. Capacitance variations IGBT051020171519CVR 10 3 10 2 10 1 10 -1 10 0 10 1 10 2 C (pF) VCE (V) Cies Coes Cres f = 1 MHz STGWA50IH65DF Electrical characteristics (curves) DS11796 - Rev 3 page 6/14 |
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