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STI175N4F6AG Datasheet(PDF) 5 Page - STMicroelectronics

Part # STI175N4F6AG
Description  Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STI175N4F6AG Datasheet(HTML) 5 Page - STMicroelectronics

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STI175N4F6AG
Electrical characteristics
DocID028920 Rev 1
5/12
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Source-drain current
-
120
A
ISDM(2)
Source-drain current
(pulsed)
-
480
A
VSD(2)
Forward on voltage
VGS = 0 V, ISD = 120 A
-
1.3
V
trr
Reverse recovery time
ISD = 120 A, di/dt = 100 A/µs,
VDD = 32 V (see Figure 15: "Test
circuit for inductive load
switching and diode recovery
times")
-
36
ns
Qrr
Reverse recovery
charge
-
40
nC
IRRM
Reverse recovery
current
-
2.3
A
Notes:
(1) Limited by package.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.



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