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STL8N6LF3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL8N6LF3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() May 2017 DocID027037 Rev 3 1/15 This is information on a product in full production. www.st.com STL8N6LF3 Automotive-grade N- channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STL8N6LF3 60 V 30 mΩ 7.8 A AEC-Q101 qualified Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated Wettable flank package Applications Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1: Device summary Order code Marking Package Packing STL8N6LF3 8N6LF3 PowerFLAT™ 5x6 Tape and reel |
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