3/10

STP75N15 - STB75N15 - STW75N15

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

150

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

10

µA

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 26V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 37.5 A

0.023

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 75 V, ID=37.5 A

TBD

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

4500

TBD

TBD

pF

pF

pF

td(on)

tr

td(off)

tr

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 75V, ID = 37.5 A,

RG= 4.7 Ω VGS = 10 V

( see Figure 4)

TBD

TBD

TBD

TBD

ns

ns

ns

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 126V, ID = 75 A,

VGS = 10V

(Figure 7)

110

TBD

TBD

TBD

nC

nC

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

75

300

A

A

VSD (1)

Forward On Voltage

ISD = 75 A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 37.5 A, di/dt = 100A/µs

VDD = 75 V, Tj = 25°C

(see test circuit, Figure 5)

TBD

TBD

TBD

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 37.5 A, di/dt = 100A/µs

VDD = 75 V, Tj = 150°C

(see test circuit, Figure 5)

TBD

TBD

TBD

ns

µC

A