BPV23NF, BPV23NFL

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Vishay Semiconductors

Rev. 1.8, 24-Aug-11

2

Document Number: 81513

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BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

VF

11.3

V

Breakdown voltage

IR = 100 μA, E = 0

V(BR)

60

V

Reverse dark current

VR = 10 V, E = 0

Iro

230

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

48

pF

Serial resistance

VR= 12 V, f = 1 MHz

RS

900

Ω

Open circuit voltage

Ee = 1 mW/cm2,

λ = 950 nm

Vo

390

mV

Temperature coefficient of Vo

Ee = 1 mW/cm2,

λ = 950 nm

TKVo

- 2.6

mV/K

Short circuit current

Ee = 1 mW/cm2,

λ = 950 nm

Ik

65

μA

Reverse light current

Ee = 1 mW/cm2,

λ = 950 nm,

VR = 5 V

Ira

45

65

μA

Temperature coefficient of Ira

Ee = 1 mW/cm2,

λ = 950 nm,

VR = 10 V

TKIra

0.1

%/K

Absolute spectral sensitivity

VR = 5 V,

λ = 870 nm

s(

λ)0.57

A/W

VR = 5 V,

λ = 950 nm

s(

λ)0.60

A/W

Angle of half sensitivity

ϕ

± 60

deg

Wavelength of peak sensitivity

λp

940

nm

Range of spectral bandwidth

λ0.5

790 to 1050

nm

Quantum efficiency

λ = 950 nm

η

90

%

Noise equivalent power

VR = 10 V,

λ = 950 nm

NEP

4 x 10-14

W/

√ Hz

Detectivity

VR = 10 V,

λ = 950 nm

D*

5 x 1012

cm

√Hz/W

Rise time

VR = 10 V, RL = 1 k

Ω, λ = 820 nm

tr

70

ns

Fall time

VR = 10 V, RL = 1 k

Ω, λ = 820 nm

tf

70

ns

Cut-off frequency

VR = 12 V, RL = 1 k

Ω, λ = 870 nm

fc

4MHz

VR = 12 V, RL = 1 k

Ω, λ = 950 nm

fc

1MHz

20

40

60

80

1

10

100

1000

100

94 8403

V

R = 10 V

T

amb - Ambient Temperature (°C)

0.6

0.8

1.0

1.2

1.4

94 8409

VR =5 V

λ = 950 nm

100

80

60

40

20

0

T

- Ambient Temperature (°C)

amb