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AP2030SD Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP2030SD
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  11 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP2030SD Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.037
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=2.6A
-
-
60
mΩ
VGS=2.5V, ID=1.8A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=5V, ID=2.6A
-
3.6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=16V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
-
nA
Qg
Total Gate Charge
2
ID=2.6A
-
9
-
nC
Qgs
Gate-Source Charge
VDS=10V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=4.5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-15
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
-
1.7
A
VSD
Forward On Voltage
2
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
AP2030SD
±100



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