STP1806 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STP1806

Description	N-CHANNEL 60V - 0.015 - 50A TO-220 STripFET™ POWER MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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November 2004

STP1806

N-CHANNEL 60V - 0.015

W - 50A TO-220

STripFET™ POWER MOSFET

Rev.0.1

■

TYPICAL RDS(on) = 0.015

W

■

EXCEPTIONAL dv/dt CAPABILITY

■

100% AVALANCHE TESTED

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based

process.

The

resulting

transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less

critical

alignment

steps

therefore

a

remarkable manufacturing reproducibility.

APPLICATIONS

■

HIGH CURRENT, HIGH SWITCHING SPEED

■

MOTOR CONTROL

■

DC-DC & DC-AC CONVERTERS

■

AUTOMOTIVE

Ordering Information

TYPE

VDSS

RDS(on)

ID

STP1806

60 V

< 0.018

W

50 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP1806

P1806

TO-220

TUBE

1

2

3

TO-220

ABSOLUTE MAXIMUM RATINGS

(

) Pulse width limited by safe operating area.

(1) ISD

50A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX

(2) Starting Tj = 25 oC, ID = 25A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 k

W)

60

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

50

A

ID

Drain Current (continuous) at TC = 100°C

35

A

IDM(

)

Drain Current (pulsed)

200

A

Ptot

Total Dissipation at TC = 25°C

110

W

Derating Factor

0.73

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

7

V/ns

EAS (2)

Single Pulse Avalanche Energy

350

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

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