TCR3UG series

2022-01-11

© 2018-2022

Toshiba Electronic Devices & Storage Corporation

15

12.7. Load Transient Response

12.8. tON Response

12.9. tOFF Response (Auto-discharge)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

VOUT = 2.8V

VOUT = 2.8V

VOUT = 2.8V

VOUT = 2.8V

VOUT = 2.8V

VIN = 3.8 V , COUT = 1

μF

IOUT = 0 mA, Ta = 25°C

VOUT: 2V/div

IIN: 200mA/div

VCT: 1V/div

VIN = 3.8 V , COUT = 1

μF

IOUT = 0 mA, Ta = 25°C

VOUT: 2V/div

IIN: 200mA/div

VCT: 1V/div

VIN = 3.8 V , COUT = 1

μF

IOUT = 300 mA, Ta = 25°C

VOUT: 2V/div

IIN: 200mA/div

VCT: 1V/div

VIN = 3.8 V , COUT = 1

μF

IOUT = 300 mA, Ta = 25°C

VOUT: 2V/div

IIN: 200mA/div

VCT: 1V/div

500

μs/div

500

μs/div

500

μs/div

500

μs/div

50

μs/div

VIN = 3.8 V ,VCT = 1 V, COUT = 1

μF

IOUT = 1 mA ⇔ 50 mA, Ta = 25°C

VOUT = 2.8V

50

μs/div

VIN = 3.8 V ,VCT = 1 V, COUT = 1

μF

IOUT = 0 mA ⇔ 10 mA, Ta = 25°C

VOUT: 50 mV/div

IOUT: 50 mA/div

VOUT: 200 mV/div

IOUT: 10 mA/div