Electrical characteristics

STB13N80K5, STF13N80K5, STP13N80K5,

STW13N80K5

4/23

DocID024348 Rev 4

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 800 V

1

µA

VGS = 0 V, VDS = 800 V,

TC = 125 ° C(1)

50

µA

IGSS

Gate body leakage current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDD = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 6 A

0.37

0.45

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

-

870

-

pF

Coss

Output capacitance

-

50

-

pF

Crss

Reverse transfer

capacitance

-

2

-

pF

Co(tr)(1)

Equivalent capacitance time

related

VGS = 0 V, VDS = 0 to 640 V

-

110

-

pF

Co(er)(2)

Equivalent capacitance

energy related

-

43

-

pF

Rg

Intrinsic gate resistance

f = 1 MHz, ID= 0 A

-

5

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 2.5 A

VGS= 0 to 10 V

(see Figure 22: "Test circuit

for gate charge behavior")

-

29

-

nC

Qgs

Gate-source charge

-

7

-

nC

Qgd

Gate-drain charge

-

18

-

nC

Notes:

(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to

80% VDSS.

(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to

80% VDSS.