2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS = 0 V

500

V

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 500 V

1

µA

VGS = 0 V, VDS = 500 V, TC = 125 °C (1)

50

µA

IGSS

Gate body leakage

current

VDS = 0 V, VGS = ±20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 50 µA

3

3.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.2 A

1.22

1.5

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

-

535

pF

Coss

Output capacitance

75

Crss

Reverse transfer

capacitance

17

Coss eq. (1)

Equivalent output

capacitance

VDS = 0 to 400 V, VGS = 0 V

-

45

pF

Qg

Total gate charge

VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V

(see Figure 16. Test circuit for gate charge

behavior)

-

20

28

nC

Qgs

Gate-source charge

4

Qgd

Gate-drain charge

10

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 250 V, ID = 2.2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15. Test circuit for resistive load

switching times and Figure 20. Switching

time waveform)

-

15

-

ns

tr

Rise time

10

td(off)

Turn-off delay time

32

tf

Fall time

15

STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z

Electrical characteristics

DS2834 - Rev 6

page 3/29