Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

4.4

A

ISDM (1)

Source-drain current

(pulsed)

17.6

VSD (2)

Forward on voltage

ISD = 4.4 A, VGS = 0 V

-

1.6

V

trr

Reverse recovery time

ISD = 4.4 A, di/dt = 100 A/µs

VDD = 30 V, Tj = 150°C (see Figure 17. Test

circuit for inductive load switching and

diode recovery times)

-

310

ns

Qrr

Reverse recovery charge

1.425

µC

IRRM

Reverse recovery current

9.2

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS = ±1 mA, ID = 0 A

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

STB5NK50Z-1,STD5NK50ZT4,STP5NK50Z,STP5NK50ZFP,STU5NK50Z

Electrical characteristics

DS2834 - Rev 6

page 4/29