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STW36NM60N Datasheet(PDF) 7 Page - STMicroelectronics |
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STW36NM60N Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 13 page ![]() STW36NM60N Electrical characteristics Doc ID 018963 Rev 1 7/13 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature Figure 13. Source-drain diode forward characteristics C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM09024v1 Eoss 1 2 0 0 100 VDS(V) (µJ) 400 200 300 500 AM09025v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM09026v1 RDS(on) 1.1 0.9 0.7 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 1.3 1.5 1.7 1.9 2.1 ID=14.5A AM09027v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM00897v1 VSD 0 10 ISD(A) (V) 5 25 15 20 0.4 0.6 0.8 1.0 TJ=-50°C TJ=150°C TJ=25°C 1.2 1.4 1.6 AM09039v1 Obsolete Product(s) - Obsolete Product(s) |
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