Electrical characteristics

STW45NM60D

4/12

Doc ID 15709 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

10

µA

VDS = Max rating, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±30 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 22.5 A

0.09

0.11

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 22.5 A

-30

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

-

3500

1400

76

-

pF

pF

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

520

-

pF

RG

Gate input resistance

f=1 MHz Gate DC Bias = 0

test signal level = 20 mV

open drain

-2

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 45 A,

VGS = 10 V

Figure 15

-

96

20

60

-

nC

nC

nC

Obsolete

Product(s)

- Obsolete

Product(s)