Characteristics

T435T-600FP

2/9

DocID17632 Rev 3

1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

Tc = 105 °C

4

A

ITSM

Non repetitive surge peak on-state current (full

cycle sine wave, TJ initial = 25 °C)

F = 60 Hz

t = 16.7 ms

32

A

F = 50 Hz

t = 20 ms

30

I²tI²t Value for fusing

tp = 10 ms

6

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr ≤ 100 ns

F = 120 Hz

Tj = 125 °C

50

A/µs

VDSM/VRSM Non repetitive surge peak off-state voltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM

+ 100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

-40 to +150

-40 to +125

°C

Table 2. Electrical characteristics, Snubberless (3 quadrants)

(Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

(1)

VD = 12 V RL = 30 Ω

I - II - III

MAX

35

mA

VGT

VD = 12 V RL = 30 Ω

I - II - III

MAX

1.3

V

VGD

VD = VDRM RL = 3.3 kΩ

I - II - III

MIN

0.2

V

IH

(2)

IT = 100 mA

MAX

35

mA

IL

IG = 1.2 x IGT

I - III

MAX

50

mA

II

MAX

80

dV/dt (2)

VD = 67% VDRM, gate open, Tj = 125 °C

MIN

750

V/µs

(dI/dt)c (2)

Without snubber, Tj = 125 °C

MIN

5.3

A/ms

Vins

Insulation rms voltage, 1 minute

2.0

kV

1.

Minimum IGT is guaranteed at 5% of IGT max.

2.

For both polarities of A2 pin referenced to A1 pin