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AP4435D Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4435D Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 4 page  Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Low On-resistance BVDSS -30V ▼ ▼ ▼ ▼ Fast Switching Speed RDS(ON) 20mΩ ▼ ▼ ▼ ▼ PDIP-8 Package ID -9A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 50 ℃/W Data and specifications subject to change without notice Thermal Data Parameter Total Power Dissipation 2.5 -55 to 150 Operating Junction Temperature Range -55 to 150 Linear Derating Factor 0.02 Storage Temperature Range Continuous Drain Current 3 - 5.8 Pulsed Drain Current 1 - 50 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 201114031 AP4435D Rating - 30 ±20 - 9 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. D D D D S S S G PDIP-8 G D S |
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