AP4501GD datasheet(4/7 Pages) A-POWER

Part #	AP4501GD

Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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4 / 7 page

N-Channel

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

4/7

AP4501GD

V DS , Drain-to-Source Voltage (V)

T A =25

o C

10V

8.0V

6.0V

5.0V

V G = 4.5 V

0.2

0.8

1.4

2.0

-50

100

150

T j , Junction Temperature (

o C)

I D =7A

V G = 10V

V DS , Drain-to-Source Voltage (V)

T A =150

o C

10V

8.0V

6.0V

5.0V

V G = 4.5 V

0.01

0.1

0.4

0.8

1.2

V SD , Source-to-Drain Voltage (V)

T J =150

o C

T J =25

o C

0.6

0.9

1.2

1.5

-50

100

150

T j , Junction Temperature (

o C )

246

V GS ,Gate-to-Source Voltage (V)

I D =5 A

T A =25 ℃

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