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AP9435GG Datasheet(PDF) 2 Page - Advanced Power Electronics Corp.

Part # AP9435GG
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP9435GG Datasheet(HTML) 2 Page - Advanced Power Electronics Corp.

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Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
-
50
mΩ
VGS=-4.5V, ID=-2A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
2
VDS=-10V, ID=-4A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=± 20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=-4A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=-25V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=15Ω
-14
-
ns
Ciss
Input Capacitance
VGS=0V
-
520
830
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
16
24
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-1A, VGS=0V
-
-
-1.3
V
t
rr
Reverse Recovery Time
IS=-4A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
24
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t < 10s.
2/4
AP9435GG



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