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STU1030PL Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU1030PL Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page  P-Channel E nhancement Mode MOS FE T ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V Drain Current-Continuous @ TJ=125 C -Pulsed ID 18 50 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 175 C THE R MAL CHAR ACTE R IS TICS a a a b 1 P reliminary May.28 2004 S amHop Microelectronics C orp. P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max -18A 55 @ V GS = -10V 85 @ V GS = -4.5V F E AT UR E S -30V 45 30 S T U/D1030P L TO-252 and TO-251 Package. S uper high dense cell design for low R DS(ON). R ugged and reliable. S DU S E R IE S TO-252AA(D-PAK) S DD S E R IE S TO-251(l-PAK) G G S S D D S G D Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC 3 50 R JA /W C /W C 20 20 |
Similar Part No. - STU1030PL |
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Similar Description - STU1030PL |
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