STU1255PL datasheet(1/8 Pages) SAMHOP

Part #	STU1255PL

Description	P-Channel E nhancement Mode Field Effect Transistor

PDF	8 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1

Arp,20 2005 ver1.1

S amHop Microelectronics C orp.

P R ODUC T S UMMAR Y

V DS S

ID

R DS (ON) ( m W ) Max

-12A

110 @ V GS = -10V

145 @ V GS = -4.5V

F E AT UR E S

-55V

TO-252 and TO-251 Package.

S uper high dense cell design for low R DS(ON).

R ugged and reliable.

S TU S E R IE S

TO-252AA(D-PAK)

S TD S E R IE S

TO-251(l-PAK)

G

S

D

S

G

D

S T U/D1255P L

P-Channel E nhancement Mode Field E ffect Transistor

Parameter

S ymbol

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

V

Drain Current-Continuous @ Ta

-Pulsed

ID

50

A

W

IDM

Drain-S ource Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 175

C

a

b

-55

-15

20

-12

-23

25 C

70 C

Ta= 25 C

Ta=70 C

35

-10

A

Limit

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

Thermal R esistance, Junction-to-Ambient

R JC

3

50

R JA

/W

C

/W

C

AB S OLUTE MAXIMUM R ATINGS

(TA=25 C unles s otherwis e noted)

1

Drain-S ource Voltage R ating

60

Vspike

d

V

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STU1255PL Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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