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PJS6461 Datasheet(PDF) 1 Page - Pan Jit International Inc. |
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PJS6461 Datasheet(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PJS6461 February 7,2022 PJS6461-REV.01 Page 1 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -3.2A SOT-23 6L Unit : inch(mm) Features RDS(ON), VGS@-10V,ID@-3.2A<110m Ω RDS(ON), VGS@-4.5V,ID@-1.6A<130m Ω High switching speed. Improved dv/dt capability. Low gate charge. Low reverse transfer capacitance. Lead free in compliance with EU RoHS 2.0. Green molding compound as per IEC 61249 Std. Mechanical Data Case : SOT-23 6L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0005 ounces, 0.0141 grams PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS +20 Continuous Drain Current TA=25oC ID -3.2 A TA=70oC -2.5 Pulsed Drain Current IDM -12.8 Power Dissipation TA=25oC PD 2 W TA=70oC 1.3 Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal Resistance - Junction to Ambient(Note 3) RθJA 62.5 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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