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M29W640FT Datasheet(PDF) 36 Page - STMicroelectronics |
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M29W640FT Datasheet(HTML) 36 Page - STMicroelectronics |
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36 / 72 page ![]() 7 DC and AC parameters M29W640FT, M29W640FB 36/72 Table 11. Device Capacitance 1. Sampled only, not 100% tested. Table 12. DC Characteristics Symbol Parameter Test Condition Min Max Unit CIN Input Capacitance VIN = 0V 6 pF COUT Output Capacitance VOUT = 0V 12 pF Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V VIN VCC ±1 µA ILO Output Leakage Current 0V VOUT VCC ±1 µA ICC1 Supply Current (Read) E = VIL, G = VIH, f = 6MHz 10 mA ICC2 Supply Current (Standby) E = VCC ±0.2V, RP = VCC ±0.2V 100 µA ICC3 Supply Current (Program/ Erase) Program/Erase Controller active VPP/WP = VIL orVIH 20 mA VPP/WP = VPP 20 mA VIL Input Low Voltage –0.5 0.8V VIH Input High Voltage 0.7VCC VCC +0.3 V VPP Voltage for VPP/WP Program Acceleration VCC = 2.7V ±10% 11.5 12.5V IPP Current for VPP/WP Program Acceleration VCC = 2.7V ±10% 15 mA VOL Output Low Voltage IOL = 1.8mA 0.45V VOH Output High Voltage IOH = –100µAVCC –0.4 V VID Identification Voltage 11.5 12.5V VLKO (1) 1. Sampled only, not 100% tested. Program/Erase Lockout Supply Voltage 1.8 2.3V |
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