| Electronic Components Datasheet Search |
|
APT31N60SCS Datasheet(PDF) 2 Page - Advanced Power Technology |
|
|
|||||||||||||||||||||||||||||
APT31N60SCS Datasheet(HTML) 2 Page - Advanced Power Technology |
|
2 / 5 page ![]() SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 D = 0.9 0.05 FINAL DATA SHEET WITH MOS 7 FORMAT Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 t2 t1 Note: APT Reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS APT31N60B_SCS(G) Symbol RθJC RθJA MIN TYP MAX 0.5 62 UNIT °C/W Characteristic Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting T j = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A 4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2% Symbol C iss C oss C rss Q g Q gs Q gd t d(on) t r t d(off) t f E on E off E on E off Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions V GS = 0V V DS = 25V f = 1 MHz V GS = 10V V DD = 400V I D = 18A @ 25°C RESISTIVE SWITCHING V GS = 15V V DD = 400V I D = 18A @ 25°C R G = 3.3Ω INDUCTIVE SWITCHING @ 25°C V DD = 400V, VGS = 15V I D = 18A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C V DD = 400V, VGS = 15V I D = 18A, RG = 4.3Ω 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOS™ product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. MIN TYP MAX 3055 3260 28 65 85 14 22 10 5 110 5 290 125 170 100 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 4 (V GS = 0V, IS = -18A) Reverse Recovery Time (I S = -18A, dlS/dt = 100A/µs) Reverse Recovery Charge (I S = -18A, dlS/dt = 100A/µs) Peak Diode Recovery dv/dt 7 UNIT Amps Volts ns µC V/ns MIN TYP MAX 18 93 1.2 450 12 4 Symbol I S I SM V SD t rr Q rr dv/ dt THERMAL CHARACTERISTICS |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |