DF2S8.2CT

2

4. Electrical Characteristics (Unless otherwise specified, Ta = 25�)

VRWM: Working peak reverse

voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

Fig. 4.1

Definitions of Electrical Characteristics

Characteristics

Zener voltage

Dynamic impedance

Reverse current

Total capacitance

Symbol

VZ

ZZ

IR

Ct

Note

Test Condition

IZ = 5 mA

IZ = 5 mA

VR = 6.5 V

VR = 0 V, f = 1 MHz

Min

7.7

�

�

�

Typ.

8.2

�

�

20

Max

8.7

30

0.5

�

Unit

V

Ω

µA

pF

5. Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±30 kV

Note:

Criterion: No damage to devices.

2022-02-09

Rev.5.0

©2022

Toshiba Electronic Devices & Storage Corporation