SH2104WN

This chip data sheet refers to the device data sheet

RGW80TS65D

Passivation

Top Side Metallization

Back Side Metallization

lFurther Electrical Characteristics

Polyimide

AlSiCu:5.0μm

Ti/Ni:0.4μm/Au:0.05μm

Switching characteristics and thermal properties are depending strongly on module design

and mounting technology and can therefore not be specified for a bare die.

lChip Information

200mm

0.07±0.01mm

2.50mm×2.50mm

0.10±0.03mm

Wafer Size

Wafer Thickness

Chip Size

Cut Line Width

2.50

0.10±0.03

Unit：mm

: Pad Area

①

: Anode Bonding Pad

Backside : Cathode

Unit : μm

①

2500

2400

1750

325

www.rohm.com

© 2022 ROHM Co., Ltd. All rights reserved.

2/2

2022.10 - Rev.A

Datasheet