PPJD45P03

April 5,2017-REV.00

Page 2

Electrical Characteristics (TA=25

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,ID=-250uA

-30

-

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-1.0

-1.6

-2.5

Drain-Source On-State Resistance

RDS(on)

VGS=-10V,ID=-10A

-

12

15.5

m

Ω

VGS=-4.5V,ID=-6A

-

18

23

Zero Gate Voltage Drain Current

IDSS

VDS=-30V,VGS=0V

-

-

-1.0

uA

Gate-Source Leakage Current

IGSS

VGS=+20V,VDS=0V

-

-

+100

nA

Dynamic

(Note 6)

Total Gate Charge

Qg

VDS=-15V, ID=-8A,

VGS=-4.5V

(Note 1,2)

-

14

-

nC

Gate-Source Charge

Qgs

-

4.6

-

Gate-Drain Charge

Qgd

-

5.4

-

Input Capacitance

Ciss

VDS=-15V, VGS=0V,

f=1.0MHZ

-

1556

-

pF

Output Capacitance

Coss

-

243

-

Reverse Transfer Capacitance

Crss

-

175

-

Turn-On Delay Time

td(on)

VDD=-15V, ID=-1A,

VGS=-10V, RG=6Ω

(Note 1,2)

-

7.3

-

ns

Turn-On Rise Time

tr

-

13

-

Turn-Off Delay Time

td(off)

-

88

-

Turn-Off Fall Time

tf

-

48

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

IS

---

-

-

-45

A

Diode Forward Voltage

VSD

IS=-1A,VGS=0V

-

-0.7

-1.0

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics

3.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and

duty cycles to keep initial TJ =25°C.

4.

The maximum current rating is package limited

5.

RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. Mounted on a 1 inch

2 with 2oz.square pad of copper

6.

Guaranteed by design, not subject to production testing.