MAXIMUM RATINGS

All Ratings: T

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

165V 150W 150MHz

The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI

power amplifiers up to 150MHz.

•

Output Power = 150 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 50%

for Superior Ruggedness.

ARF521

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

G

D

S

APT

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

I

DSS

I

GSS

g

fs

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Forward Transconductance (V

Gate Threshold Voltage (V

MIN

TYP

MAX

500

0.56

8

25

250

±100

3

3.6

24

UNIT

Volts

Ohms

µA

nA

mhos

Volts

Symbol

V

DSS

I

D

V

GS

P

D

T

T

L

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage

Total Device Dissipation @ T

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF521

500

10

±30

250

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

V

THERMAL CHARACTERISTICS

Symbol

R

θJC

R

θCS

Characteristic

Junction to Case

MIN

TYP

MAX

0.60

0.1

UNIT

°C/W