MS1000 datasheet(1/3 Pages) ADPOW

Part #	MS1000

Description	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

PDF	3 Pages

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MS1000

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS1000 is a 28V Class A silicon NPN planar transistor

designed primarily for SSB communications. Diffused

emitter ballast provide infinite VSWR capability

under rated operating conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

65

V

VCEO

Collector-Emitter Voltage

36

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

20

A

PD

Power Dissipation

270

W

Tj

Junction Temperature

200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

0.65

°°C/W

Features

• 30 MHz

• 28 VOLTS

• IMD = -30 dB

• GOLD METALLIZATION

• P

OUT = 125 WATTS

• G

P = 15dB MINIMUM

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

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