MS1076

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DESCRIPTION:

DESCRIPTION:

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor

designed primarily for SSB and VHF communications. This

device utilizes an emitter ballasted die geometry for maximum

ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector - Base Voltage

70

V

Collector - Emitter Voltage

35

V

Emitter - Base Voltage

4.0

V

Device Current

16

A

Power Dissipation

320

W

Junction Temperature

+200

°°C

Storage Temperature

- 65 to +150

°°C

Thermal Data

Thermal Data

Junction - Case Thermal Resistance

0.7

°°C/W

Features

Features

• 30 MHz

• 28 VOLTS

• GOLD METALLIZATION

• P

• G

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855