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MS1204 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1204 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() MS1204 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The SD1019 is a 28 volt epitaxial silicon NPN planar transistor designed primarily for VHF communications. This device utilizes nichrome aluminum metallization to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4 V IC Device Current 9 A PDISS Power Dissipation 117 W TJ Junction Temperature + 200 °°C TSTG Storage Temperature - 65 to + 150 °°C Thermal Data RTH(j-c) Junction-Case Thermal Resistance 1.7 °°C/W Features Features • CLASS C TRANSISTOR • FREQUENCY 136MHz • VOLTAGE 28V • POWER OUT 80W • POWER GAIN 9.0dB • COMMON EMITTER RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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