MS1227.PDF 10-28-02

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MS1227

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS1227 is a 12.5V epitaxial NPN planar transistor designed

primarily for SSB communications. This device utilizes emitter

ballasting for improved ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

18

V

Emitter-Base Voltage

4.0

V

Device Current

4.5

A

Power Dissipation

80

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

2.2

°°C/W

Features

• 30 MHz

• 12.5 VOLTS

• GOLD METALIZATION

• P

• G

• COMMON EMITTER CONFIGURATION