MS1253

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

RF & MICROWAVE TRANSISTORS

HF/VHF APPLICATIONS

DESCRIPTION

DESCRIPTION:

The MS1253 is a 12.5 V Class C epitaxial silicon NPN

transistor designed primarily for land mobile transmitter

applications. This device utilizes emitter ballasting, is

extremely stable and capable of withstanding high VSWR

under operating conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

45

V

Collector-Emitter Voltage

18

V

Emitter-Base Voltage

3.5

V

Power Dissipation

183

W

Device Current

12.0

A

Junction Temperature

200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

1.05

°°C/W

Features

Features

• 50 MHz

• 12.5 VOLTS

• P

• G

• COMMON EMITTER CONFIGURATION