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MS1337 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1337 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 053-7069 Rev - 10-2002 MS1337 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications. The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VCES Collector-Emitter Voltage 36 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 8.0 A PDISS Power Dissipation 70 W TJ Junction Temperature +200 °°°°C TSTG Storage Temperature -65 to +150 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.2 °°°°C/W Features Features Features Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION |
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