MS1426

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DESCRIPTION:

DESCRIPTION:

The MS1426 is a epitaxial silicon NPN planar transistor designed

for Class C driver applications in the 450 - 512 MHz frequency

range. This device uses an emitter ballasted die geometry

specifically designed for optimum stable power gain, maximum

efficiency and infinite VSWR capability.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

36

V

Collector-Emitter Voltage

16

V

Collector-Emitter Voltage

36

V

Emitter-Base Voltage

4.0

V

Device Current

2.5

A

Power Dissipation

58

W

Junction Temperature

200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Junction-case Thermal Resistance

3.0

°°C/W

Features

Features

• 470 MHz

• 12.5 VOLTS

• P

• G

• COMMON EMITTER CONFIRGURATION

RF & MICROWAVE TRANSISTORS

UHF MOBILE APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855