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MS1452 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1452 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() MS1452 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION :: The MS1452 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 48 V VCES Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4.0 V PDISS Power Dissipation 43 W IC Device Current 5 A TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 º C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 3.0 °°C/W Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALLIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MINIMUM • G P = 7.5 dB RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 |
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