MS1453 datasheet(1/3 Pages) ADPOW

Part #	MS1453

Description	RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS

PDF	3 Pages

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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MS1453.PDF 12-10-03

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

MS1453

DESCRIPTION:

The MS1453 is a gold metallized epitaxial silicon

NPN planar transistor using diffused emitter ballast

resistors for high linearity Class AB operation in

cellular base station applications.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25

°°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

50

V

VCES

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Device Current

5.0

A

PDISS

Power Dissipation

43

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

3.0

°°C/W

Features

• 800-900 MHz

• 24 VOLTS

• COMMON EMITTER

• GOLD METALIZATION

• INTERNAL INPUT MATCHING

• CLASS AB LINEAR OPERATION

• P

OUT = 30 W MIN. WITH 7.5 dB GAIN

RF & MICROWAVE TRANSISTORS

800-900 MHz BASESTATION APPLICATIONS

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