MS1536

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

F

DESCRIPTION:

DESCRIPTION:

The MS1536 is a 28V Class C epitaxial silicon NPN planar

transistor designed primarily for UHF communications.

This device utilizes diffused emitter resistors to achieve

10:1 VSWR capability under specified operating conditions.

Internal input matching provides optimum power gain and

efficiency over the 225 – 400 MHz band.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

55

V

Collector-Emitter Voltage

55

V

Emitter-Base Voltage

4.0

V

Device Current

10

A

Power Dissipation

175

W

Storage Temperature

-65 to +150

°°C

Junction Temperature

+200

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

1.0

°°C/W

Features

Features

• 900 MHz

• 24 VOLTS

• P

OUT

= 60 WATTS

• G

• INPUT AND OUTPUT MATCHED

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

800 / 900 MHz APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855