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MS1649 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1649 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS DESCRIPTION: The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 16 V VEBO Emitter-Base Voltage 3.5 V IC Collector Current 1.0 A PTOT Total Power Dissipation 7.8 W TSTG Storage Temperature -65 to +200 °C TJ Junction Temperature +200 °C Thermal Data RTH(J-C) Thermal Resistance Junction-Case 35.0 °C/W 1. Collector 2. Base 3. Emitter TO-39 Features • 470 MHz • P OUT = 3W • G P = 9.5dB MINIMUM • COMMON EMITTER CONFIGURATION |
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