MS2200

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DESCRIPTION:

The MS2200 is a hermetically sealed, gold metallized silicon NPN

pulse power transistor mounted in a common base balanced

configuration. The MS2200 is designed for applications requiring

high peak power and low duty cycles within the frequency range of

400 – 500 MHz.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

43.2

A

Power Dissipation

1167

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Junction-Case Thermal Resistance

0.15

°°C/W

Features

Features

• 500 Watts @ 250 µSec Pulse Width, 10% Duty Cycle

• Refractory Gold Metallization

• Emitter Ballasting And Low Resistance For Reliability

and Ruggedness

• Infinite VSWR Capability At Specified Operating

Conditions

• Input Matched, Common Base Configuration

• Balanced Configuration

RF AND MICROWAVE TRANSISTORS

UHF PULSED APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855