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MS2472

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS2472 is a hermetically sealed, gold metallized, silicon

NPN power transistor. The MS2472 is designed for applications

requiring high peak power and low duty cycles such as IFF and DME.

The MS2472 is internal input/output matched resulting in improved

broadband performance and a low thermal resistance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

40

A

Power Dissipation

1350

W

Junction Temperature

200

Storage Temperature

-65 to +150

Thermal Data

Thermal Data

Thermal Resistance Junction-case

0.06

°°C/W

Features

Features

• DESIGNED FOR HIGH POWER PULSED IFF AND DME

APPLICATIONS

• 600 W (typ.) IFF 1030 – 1090 MHz

• 550 W (min.) DME 1025 – 1150 MHz

• 1025 - 1150 MHz

• P

• G

• GOLD METALLIZATION

• INTERNAL INPUT/OUTPUT MATCHED

• COMMON BASE CONFIGURATION

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855