MS3302 datasheet(1/4 Pages) ADPOW

Part #	MS3302

Description	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

PDF	4 Pages

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Manufacturer	ADPOW [Advanced Power Technology]

Direct Link	http://www.advpowertech.com

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MS3302

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS3302 is a common base silicon NPN microwave transistor

designed for general purpose applications over the 1.0 – 3.0 GHz

frequency range. The MS3302 utilizes an emitter ballasted die

geometry for maximum load VSWR capability under rated

conditions.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

PDISS

Power Dissipation

17.6

W

VCC

Collector-Supply Voltage

30

V

IC

Device Current

700

mA

TJ

Junction Temperature

200

°°C

TSTG

Storage Temperature

-65 to +200

°°C

Thermal Data

RTH(J-C)

Thermal Resistance Junction-case

8.5

°°C/W

**Applies only to rated RF amplifier operation

Features

• 3.0 GHz

• GOLD METALIZATION

• EMITTER BALLASTED

• P

OUT = 4.5 W MINIMUM

• G

P = 4.5 dB

• ∞

∞:1 VSWR CAPABILITY @ RATED CONDITIONS

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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