MSC1075MP

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DESCRIPTION:

The MSC1075MP is a gold-metallized silicon, NPN power transistor

designed for applications requiring high peak power and low duty

cycles, such as IFF, DME, and TACAN. It is packaged in the .280"

input-matched stripline flange package, resulting in improved

broadband performance and low thermal resistance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

5.5

A

Power Dissipation

218.7

W

Junction Temperature

+ 200

°°C

Storage Temperature

–65 to +150

°°C

THERMAL DATA

Junction-Case Thermal Resistance

0.8

°°C/W

Features

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME,

TACAN APPLICATIONS

• 80 W (typ.) IFF 1030 – 1090 MHz

• 75 W (min.) DME 1025 – 1150 MHz

• 50 W (typ.) TACAN 960 –1215 MHz

• 8.0 dB MIN. GAIN

• REFRACTORY GOLD METALLIZATION

• EMITTER BALLASTING AND LOW THERMAL

RESISTANCE FOR RELIABILITY AND RUGGEDNESS

• INFINITE LOAD VSWR CAPABILITY AT SPECIFIED

OPERATING CONDITIONS

• INPUT MATCHED COMMON BASE CONFIGURATION

RF AND MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855