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APTM100DA18T Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM100DA18T Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 6 page ![]() APTM100DA18T APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 1000V Tj = 25°C 500 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 2000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 21.5A 180 215 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 10.4 Coss Output Capacitance 1.76 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.32 nF Qg Total gate Charge 372 Qgs Gate – Source Charge 48 Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 43A 244 nC Td(on) Turn-on Delay Time 18 Tr Rise Time 12 Td(off) Turn-off Delay Time 155 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A RG = 2.5Ω 40 ns Eon Turn-on Switching Energy 1800 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, RG = 2.5Ω 1246 µJ Eon Turn-on Switching Energy 2846 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, RG = 2.5Ω 1558 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 100°C 60 A IF = 60A 1.9 2.5 IF = 120A 2.2 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.7 V Tj = 25°C 280 trr Reverse Recovery Time IF = 60A VR = 667V di/dt = 200A/µs Tj = 125°C 350 ns Tj = 25°C 760 Qrr Reverse Recovery Charge IF = 60A VR = 667V di/dt = 200A/µs Tj = 125°C 3600 nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. |
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