GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

2001

1.0 Watt - 28 Volts, Class C

Microwave 2000 MHz

GENERAL DESCRIPTION

The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class

C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting

are used to provide high reliability and supreme ruggedness. The transistor

uses a fully hermetic High Temperature Solder Sealed package.

CASE OUTLINE

55BT-1, Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

5.0 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

50 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

0.25 A

Maximum Temperatures

Storage Temperature

- 65 to + 200 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

1

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2 GHz

Vcb = 28 Volts

Po = 1.0 Watts

As Above

F = 2 GHz, Po = 1.0 W

1.0

9.0

9.5

40

0.125

30:1

Watt

Watt

dB

%

BVces

BVcbo

BVebo

Icbo

h

FE

Cob

Collector to Emitter Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Output Capacitance

Thermal Resistance

Ic = 10 mA

Ic = 1 mA

Ie = 1.0 mA

Vcb = 28 Volts

Vce = 5 V, Ic = 100 mA

F =1 MHz, Vcb = 28 V

50

45

3.5

20

4.0

500

35

Volts

Volts

Volts

pF

Issue August 1996