GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

DME 150

150 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The DME 150 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and ouput prematch for

broadband capabilit. Low thermal resistance package reduces junction

temperature, extends life.

CASE OUTLINE

55AY, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

290 Watts

o2

Maximum Voltage and Current

BVces

Collector to Base Voltage

55 Volts

BVebo

Emitter to Base Voltage

4.0 Volts

Ic

Collector Current

15 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150 C

o

Operating Junction Temperature

+ 150 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout

Pin

Pg

η

c

VSWR

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 1025-1150 MHz

Vcc = 50 Volts

PW = 10

µsec

DF = 1%

F = 1090 MHz

150

7.8

8.3

40

25

20:1

Watts

Watts

dB

%

BVebo

BVces

Cob

Emitter to Base Breakdown

Collector to Emitter Breakdown

Capacitance Collector to Base

DC - Current Gain

Thermal Resistance

Ie = 15 mA

Ic = 25 mA

Vcb = 50 Volts

Ic = 250 mA, Vce = 5 V

4.0

55

20

0.6

Volts

Volts

pF

C/W

o

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Initial Issue June 1, 1994