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PJS6412 Datasheet(PDF) 1 Page - Pan Jit International Inc.

Part # PJS6412
Description  30V N-Channel Enhancement Mode MOSFET
PDF  6 Pages
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Manufacturer  PANJIT [Pan Jit International Inc.]
Direct Link  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJS6412 Datasheet(HTML) 1 Page - Pan Jit International Inc.

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PJS6412
January 19,2022
PJS6412-REV.01
Page 1
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
8 A
SOT-23 6L-1
Features
 RDS(ON), VGS@10V, ID@8A<23m
Ω
 RDS(ON), VGS@4.5V, ID@6A<32m
Ω
 High switching speed
 Improved dv/dt capability
 Low gate charge
 Low reverse transfer capacitance
 Advanced trench process technology
 Specially designed for switch load, PWM application, etc
 Lead free in compliance with EU RoHS 2.0
 Green molding compound as per IEC 61249 standard
Mechanical Data
 Case : SOT-23 6L-1 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0005 ounces, 0.014 grams
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
+20
Continuous Drain Current (Note 4)
ID
8
A
Pulsed Drain Current (Note 1)
IDM
32
Power Dissipation
Ta=25oC
PD
2
W
Derate above 25oC
16
mW/ oC
Operating Junction and Storage Temperature Range
TJ,TSTG
-55~150
oC
Typical Thermal Resistance
-
Junction to Ambient (Note 3)
RθJA
62.5
oC/W
Maximum Ratings and Thermal Characteristics (TA=25
o
C unless otherwise noted)


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