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HM5117400B Datasheet(PDF) 9 Page - Hitachi Semiconductor |
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HM5117400B Datasheet(HTML) 9 Page - Hitachi Semiconductor |
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9 / 25 page  HM5117400B Series 9 Read-Modify-Write Cycle HM5117400B -6 -7 -8 Parameter Symbol Min Max Min Max Min Max Unit Notes Read-modify-write cycle timet RWC 155 — 181 — 205 — ns to delay timet RWD 85 — 98 — 110 — ns 14 to delay timet CWD 40 — 46 — 50 — ns 14 Column address to delay timet AWD 55 — 63 — 70 — ns 14 hold time from t OEH 15 — 18 — 20 — ns Refresh Cycle HM5117400B -6 -7 -8 Parameter Symbol Min Max Min Max Min Max Unit Notes setup time (CBR refresh cycle)t CSR 5 — 5 — 5 — ns hold time (CBR refresh cycle)t CHR 10 — 10 — 10 — ns setup time (CBR refresh cycle)t WRP 0 — 0 — 0 — ns hold time (CBR refresh cycle)t WRH 10 — 10 — 10 — ns precharge to hold timet RPC 0 — 0 — 0 — ns Fast Page Mode Cycle HM5117400B -6 -7 -8 Parameter Symbol Min Max Min Max Min Max Unit Notes Fast page mode cycle timet PC 40 — 45 — 50 — ns Fast page mode pulse widtht RASP — 100000 — 100000 — 100000 ns 16 Access time from precharget CPA — 35 — 40 — 45 ns 9, 17, 20 hold time from precharget CPRH 35 — 40 — 45 — ns |
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