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A2S263 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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A2S263 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS Vb Ir = 100 µA 0.5 1.5 V tSS F = 10 GHz RL = 27 K Ω BIAS = NONE B.W. = 375 KHz LOW FREQUENCY CUTOFF = 100 Hz -59 dBM Vo f = 10 GHz Pin = -40 dBM BIAS = NONE 5000 8000 µµµµV/µµµµW RV 800 6000 Ohms Tsold t = 5.0 SEC. +230 OC SILICON SCHOTTKY BARRIER DETECTOR DIODE A2S263 DESCRIPTION: The ASI A2S263 is a Silicon P-Type Schottcky Barrier Zero Bias Detector Diode Housed in a Hermetically Sealed Glass Package. MAXIMUM RATINGS IC 20 mA VCE 2.5 V PDISS 100 mW @ TC = 25 OC TJ -60 OC to +125 OC TSTG -60 OC to +125 OC PACKAGE STYLE 01 CATHODE INDICATED BY COLOR BAND |
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Similar Description - A2S263 |
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