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ABL1601A Datasheet(PDF) 1 Page - Advanced Semiconductor |
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ABL1601A Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA2.0 V VF IF = 1.0 mA 270 320 mV CJ0 ∆∆∆∆C J0 VR = 0 V f = 1.0 MHz 0.08 0.1 0.02 pF RS ∆∆∆∆R S RS = [( VF10 mA - VF 1 mA) - ( VF100 µA - V F10 µA)] / 0.009 10 12 2.0 Ω Ω Ω Ω NF RF = 16 GHz LO = 0 dBm IF = 30 MHz NF(IF) = 1.5 dB RL = 0 Ω 7.2 dB SILICON BEAM LEAD SCHOTTKY DIODES SERIES TEE ABL1601A PACKAGE STYLE – BL711A ORDER CODE: ABL1601A DESCRIPTION: The ABL1601A is Designed for Low Noise Mixer, Phase Detector and Sampler Applications up to 18.0 GHz. FEATURES INCLUDE: • NF = 7.2 dB Max. @ 16 GHz • Excellent Matching Characteristics • Lead Strength = 4 Grams min. MAXIMUM RATINGS IF 100 mA VR 2 V PDISS 100 mW (per junction) TJ -65 OC to +175 OC TSTG -65 OC to +200 OC θθθθ JC 1.5 OC/mW |
Similar Part No. - ABL1601A |
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Similar Description - ABL1601A |
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