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ABL1601A Datasheet(PDF) 1 Page - Advanced Semiconductor

Part # ABL1601A
Description  SILICON BEAM LEAD SCHOTTKY DIODES SERIES TEE
PDF  1 Pages
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Manufacturer  ASI [Advanced Semiconductor]
Direct Link  http://www.advancedsemiconductor.com
Logo ASI - Advanced Semiconductor

ABL1601A Datasheet(HTML) 1 Page - Advanced Semiconductor

  ABL1601A Datasheet HTML 1Page - Advanced Semiconductor  
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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
VBR
IR = 10
µA2.0
V
VF
IF = 1.0 mA
270
320
mV
CJ0
∆∆∆∆C
J0
VR = 0 V
f = 1.0 MHz
0.08
0.1
0.02
pF
RS
∆∆∆∆R
S
RS = [( VF10 mA - VF 1 mA) - ( VF100
µA - V
F10
µA)] /
0.009
10
12
2.0
Ω
Ω
Ω
Ω
NF
RF = 16 GHz
LO = 0 dBm
IF = 30 MHz
NF(IF) = 1.5 dB
RL = 0
Ω
7.2
dB
SILICON BEAM LEAD SCHOTTKY DIODES
SERIES TEE
ABL1601A
PACKAGE STYLE – BL711A
ORDER CODE: ABL1601A
DESCRIPTION:
The
ABL1601A is Designed for Low
Noise Mixer, Phase Detector and
Sampler Applications up to 18.0 GHz.
FEATURES INCLUDE:
• NF = 7.2 dB Max. @ 16 GHz
• Excellent Matching Characteristics
• Lead Strength = 4 Grams min.
MAXIMUM RATINGS
IF
100 mA
VR
2 V
PDISS
100 mW (per junction)
TJ
-65
OC to +175 OC
TSTG
-65
OC to +200 OC
θθθθ
JC
1.5
OC/mW


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